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KM29W32000AT, KM29W32000AIT
Document Title
4M x 8 Bit NAND Flash Memory
Revision History
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Revision No. History
0.0 0.1 Initial issue. Data Sheet, 1999 1) Added CE don' care mode during the data-loading and reading t
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FLASH MEMORY
Draft Date
April 10th 1998 April 10th 1999
Remark
Advanced Information Final
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The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you.
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KM29W32000AT, KM29W32000AIT
4M x 8 Bit NAND Flash Memory
FEATURES
* Voltage Supply : 2.7V ~ 5.5V * Organization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bit * Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte - Status Register * 528-Byte Page Read Operation - Random Access : 10s(Max.) - Serial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 250s(typ.) - Block Erase time : 2ms(typ.) * Command/Address/Data Multiplexed I/O port * Hardware Data Protection - Program/Erase Lockout During Power Transitions * Reliable CMOS Floating-Gate Technology - Endurance : 1M Program/Erase Cycles - Data Retention : 10 years * Command Register Operation * 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch) - Forward Type
FLASH MEMORY
GENERAL DESCRIPTION
The KM29W32000A is a 4M(4,194,304)x8bit NAND Flash Memory with a spare 128K(131,072)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 250s and an erase operation can be performed in typically 2ms on an 8K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase system functions, including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the KM29W32000A extended reliability of one million program/erase cycles by providing either ECC(Error Correction Code) or real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications and also the spare 16 bytes of a page combined with the other 512 bytes can be utilized by system-level ECC. The KM29W32000A is an optimum solution for large nonvolatile storage application such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility.
PIN CONFIGURATION
PIN DESCRIPTION
VSS CLE ALE WE WP N.C N.C N.C N.C N.C N.C N.C N.C N.C N.C I/O0 I/O1 I/O2 I/O3 VSS
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
VCC CE RE R/B SE N.C N.C N.C N.C N.C N.C N.C N.C N.C N.C I/O7 I/O6 I/O5 I/O4 VCCQ
Pin Name I/O0 ~ I/O7 CLE ALE CE RE WE WP SE R/B VCC VCCQ VSS N.C
Pin Function Data Inputs/Outputs Command Latch Enable Address Latch Enable Chip Enable Read Enable Write Enable Write Protect Spare area Enable Ready/Busy output Power(2.7V ~ 5.5V) Output Butter Power(2.7V ~ 5.5V) Ground No Connection
44(40) TSOP (II) STANDARD TYPE
NOTE : Connect all VCC, VCCQ and VSS pins of each device to power supply outputs. Do not leave VCC or VSS disconnected.
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KM29W32000AT, KM29W32000AIT
Figure 1. FUNCTIONAL BLOCK DIAGRAM
VCC VSS A9 - A21 X-Buffers Latches & Decoders Y-Buffers Latches & Decoders Y-Gating
FLASH MEMORY
2nd half Page Register & S/A 32M + 1M Bit NAND Flash ARRAY (512 + 16)Byte x 8192 1st half Page Register & S/A
A0 - A7
A8 Command Command Register
Y-Gating
I/O Buffers & Latches
VCCQ VSS I/0 0 I/0 7
CE RE WE
Control Logic & High Voltage Generator
Global Buffers
Output Driver
CLE ALE WP
Figure 2. ARRAY ORGANIZATION
1 Block(=16 Row) (8K + 256) Byte
32M : 8K Row (=512 Block)
1st half Page Register (=256 Bytes)
2nd half Page Register (=256 Bytes)
1 Page = 528 Bytes 1 Block = 528 B x 16 Pages = (8K + 256) Bytes 1 Device = 528B x 16Pages x 512 Blocks = 33 Mbits 8 bit 16B Column
512B Column
Page Register 512Byte
I/O 0 ~ I/O 7 16Byte
I/O 0 1st Cycle 2nd Cycle 3rd Cycle A0 A9 A17
I/O 1 A1 A10 A18
I/O 2 A2 A11 A19
I/O 3 A3 A12 A20
I/O 4 A4 A13 A21
I/O 5 A5 A14 *X
I/O 6 A6 A15 *X
I/O 7 A7 A16 *X Column Address Row Address (Page Address)
NOTE : Column Address : Starting Address of the Register. 00H Command(Read) : Defines the starting Address of the 1st half of the Register. 01H Command(Read) : Defines the sarting Address of the 2nd half of the Register. * A8 is initially set to "Low" or "High" by the 00H or 01H Command. * X can be High or Low.
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KM29W32000AT, KM29W32000AIT
PRODUCT INTRODUCTION
FLASH MEMORY
The KM29W32000A is a 33Mbit(34,603,008 bit) memory organized as 8192 rows by 528 columns. Spare sixteen columns are located from column address of 512 to 527. A 528-byte data register is connected to memory cell arrays accommodating data transfer between the I/O buffers and memory during page read and page program operations. The memory array is made up of 16 cells that are serially connected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of the 16 pages formed by one NAND structures, totaling 4,224 NAND structures of 16 cells. The array organization is shown in Figure 2. The program and read operations are executed on a page basis, while the erase operation is executed on block basis. The memory array consists of 512 separately or grouped erasable 8K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the KM29W32000A. The KM29W32000A has addresses multiplexed into 8 I/Os. This scheme dramatically reduces pin counts and allows systems upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written through I/Os by bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. All commands require one bus cycle except for Block Erase command which requires two cycles : a cycle for erase-setup and another for erase-execution after block address loading. The 4M byte physical space requires 22 addresses, thereby requiring three cycles for byte-level addressing: column address, low row address and high row address, in that order. Page Read and Page Program need the same three address cycles following the required command input. In Block Erase operation, however, only the two row address cycles are used. Device operations are selected by writing specific commands into the command register. Table 1 defines the specific commands of the KM29W32000A.
Table 1. COMMAND SETS
Function Sequential Data Input Read 1 Read 2 Read ID Reset Page Program Block Erase Erase Suspend Erase Resume Read Status 1st. Cycle 80h 00h/01h 50h
(2) (1)
2nd. Cycle D0h -
Acceptable Command during Busy
90h FFh 10h 60h B0h D0h 70h
O
O
O
NOTE : 1. The 00H command defines starting address of the 1st half of registers. The 01H command defines starting address of the 2nd half of registers. After data access on the 2nd half of register by the 01H command, the status pointer is automatically moved to the 1st half register(00H) on the next cycle. 2. The 50H command is valid only when the SE(pin 40) is low level.
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KM29W32000AT, KM29W32000AIT
PIN DESCRIPTION
Command Latch Enable(CLE)
FLASH MEMORY
The CLE input controls the path activation for commands sent to the command register. When active high, commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
Address Latch Enable(ALE)
The ALE input controls the path activation for address and input data to the internal address/data register. Addresses are latched on the rising edge of WE with ALE high, and input data is latched when ALE is low.
Chip Enable(CE)
The CE input is the device selection control. When CE goes high during a read operation the device is returned to standby mode. However, when the device is in the busy state during program or erase, CE high is ignored, and does not return the device to standby mode.
Write Enable(WE)
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of the WE pulse.
Read Enable(RE)
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one.
Spare Area Enable(SE)
The SE input controls the spare area selection when SE is high, the device is deselected the spare area during Read1, Sequential data input and page Program.
I/O Port : I/O 0 ~ I/O 7
The I/O pins are used to input command, address and data, and to output data during read operations. The I/O pins float to high-z when the chip is deselected or when the outputs are disabled.
Write Protect(WP)
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage generator is reset when the WP pin is active low.
Ready/Busy(R/B)
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion. It is an open drain output and does not float to high-z condition when the chip is deselected or when outputs are disabled.
Power Line(VCC & VCCQ)
The VCCQ is the power supply for I/O interface logic. It is electrically isolated from main power line(VCC=2.7~5.5V) for supporting 5V tolerant I/O with 5V power supply at VCCQ.
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KM29W32000AT, KM29W32000AIT
ABSOLUTE MAXIMUM RATINGS
Parameter Voltage on any pin relative to VSS Temperature Under Bias Storage Temperature Short Circuit Output Current KM29W32000AT KM29W32000AIT TSTG IOS Symbol VIN TBIAS Rating -0.6 to +7.0 -10 to +125 -40 to +125 -65 to +150 5
FLASH MEMORY
Unit V C C mA
NOTE : 1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is VCCQ+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns. 2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage reference to GND, KM29W32000AT:TA=0 to 70C, KM29W32000AIT:TA=-40 to 85C)
Parameter Supply Voltage Supply Voltage Supply Voltage Symbol VCC VCCQ VSS Min 2.7 2.7 0 Typ. 0 Max 5.5 5.5 0 Unit V V V
NOTE : 1. Vcc and VccQ pins are separated each other.
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter Sequential Read Operating Current Program Erase Stand-by Current(TTL) Stand-by Current(CMOS) Input Leakage Current Output Leakage Current Input High Voltage Input Low Voltage, All inputs Output High Voltage Level Output Low Voltage Level Output Low Current(R/B) Symbol ICC1 ICC2 ICC3 ISB1 ISB2 ILI ILO VIH VIL VOH VOL IOH=-400A IOL=2.1mA Test Conditions tcycle=80ns, CE=VIL, IOUT=0mA CE=VIH, WP=SE=0V/VCC CE=VCC-0.2, WP=SE=0V/VCC VIN=0 to 5.5V VOUT=0 to 5.5V I/O pins Except I/O pins Vcc=2.7V ~ 3.6V Min 2.0 2.0 -0.3 2.4 8 Typ 10 10 10 10 10 Max 20 20 20 1 50 10 10 VCCQ+0.3 VCC+0.3 0.6 0.4 Vcc=3.6V ~ 5.5V Min 3.0 3.0 -0.3 2.4 8 Typ 15 15 25 10 10 Max 30 30 40 1 50 10 10 VCCQ+0.5 VCC+0.5 0.8 0.4 mA V A mA Unit
IOL(R/B) VOL=0.4V
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KM29W32000AT, KM29W32000AIT
VALID BLOCK
Parameter Valid Block Number Symbol NVB Min 502 Typ. 508
FLASH MEMORY
Max 512 Unit Blocks
NOTE : 1. The KM29W32000A may include invalid blocks. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these invalid blocks for program and erase. During its lifetime of 10 years and/or 1million program/erase cycles,the minimum number of valid blocks are guaranteed though its initial number could be reduced. (Refer to the attached technical notes) 2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block
AC TEST CONDITION
(KM29W32000AT:TA=0 to 70C, KM29W32000AIT:TA=-40 to 85C, VCC=2.7V ~ 5.5V unless otherwise noted)
Parameter Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels Output Load 1 TTL GATE and CL=50pF(3.0V+/-10%),100pF(3.0V~3.6V) Value Vcc=2.7V ~ 3.6V 0.4V to 2.4V 5ns 0.8V and 2.0V 1 TTL GATE and CL=100pF Vcc=3.6V ~ 5.5V 0.4V to 3.4V
CAPACITANCE(TA=25C, Vcc=5.0V f=1.0MHz)
Item Input/Output Capacitance Input Capacitance Symbol CI/O CIN Test Condition VIL=0V VIN=0V Min Max 10 10 Unit pF pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE H L H L L L L X X X X ALE L H L H L L L X X X
(1)
CE L L L L L L L X X X H
WE
RE H H H H H
SE X X X X L/H L/H
(3) (3)
WP X X H H H X X H H L Read Mode
Mode Command Input Address Input(3clock) Command Input Address Input(3clock)
Write Mode Data Input
H H X X X X H X X X X
Sequential Read & Data Output During Read(Busy) During Program(Busy) During Erase(Busy) Write Protect
L/H(3) L/H(3) X X 0V/VCC(2)
X
0V/VCC(2) Stand-by
NOTE : 1. X can be VIL or VIH 2. WP should be biased to CMOS high or CMOS low for standby. 3. When SE is high, spare area is deselected.
Program/Erase Characteristics
Parameter Program Time Number of Partial Program Cycles in the Same Page Block Erase Time Symbol tPROG Nop tBERS Min Typ 0.25 2 Max 1.5 10 10 Unit ms cycles ms
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KM29W32000AT, KM29W32000AIT
AC Timing Characteristics for Command / Address / Data Input
Parameter CLE Set-up Time CLE Hold Time CE Setup Time CE Hold Time WE Pulse Width ALE Setup Time ALE Hold Time Data Setup Time Data Hold Time Write Cycle Time WE High Hold Time Symbol tCLS tCLH tCS tCH tWP tALS tALH tDS tDH tWC tWH Min 0 10 0 10 25 0 10 20 10 50 15
FLASH MEMORY
Max Unit ns ns ns ns ns ns ns ns ns ns ns
AC Characteristics for Operation
Parameter Data Transfer from Cell to Register ALE to RE Delay(read ID) ALE to RE Delay(Read cycle) CE to RE Delay(ID read) Ready to RE Low RE Pulse Width WE High to Busy Read Cycle Time RE Access Time RE High to Output Hi-Z CE High to Output Hi-Z RE High Hold Time Output Hi-Z to RE Low Last RE High to Busy(at sequential read) CE High to Ready(in case of interception by CE at read) CE High Hold Time(at the last serial read) (3) RE Low to Status Output CE Low to Status Output RE High to WE Low WE High to RE Low Erase Suspend Input to Ready RE access time(Read ID) Device Resetting Time(Read/Program/Erase/after erase suspend)
(1)
Symbol tR tAR1 tAR2 tCR tRR tRP tWB tRC tREA tRHZ tCHZ tREH tIR tRB tCRY tCEH tRSTO tCSTO tRHW tWHR tSR tREADID tRST
Min 150 50 100 20 30 50 15 15 0 100 0 60 -
Max 10 100 35 30 20 100 50 +tr(R/B) 35 45 500 35 5/10/500/5
(2)
Unit s ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns s ns s
NOTE : 1. If CE goes high within 30ns after the rising edge of the last RE, R/B will not return to VOL. 2. The time to Ready depends on the value of the pull-up resistor tied R/B pin. 3. To break the sequential read cycle, CE must be held high for longer time than tCEH.
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KM29W32000AT, KM29W32000AIT
NAND Flash Technical Notes
Invalid Block(s)
FLASH MEMORY
Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. Typically, an invalid block will contain a single bad bit. The information regarding the invalid block(s) is so called as the invalid block information. The invalid block information is written to the 1st or the 2nd page of the invalid block(s) with 00h data. Devices with invalid block(s) have the same quality level or as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design must be able to mask out the invalid block(s) via address mapping. The 1st block of the NAND Flash, however, is fully guaranteed to be a valid block.
Identifying Invalid Block(s)
All device locations are erased(FFh) except locations where the invalid block information is written prior to shipping. Since the
invalid block information is also erasable in most cases, it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the invalid block(s) based on the original invalid block information and create the invalid block table via the following suggested flow chart(Figure 1). Any intentional erasure of the original invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
Create (or update) Invalid Block(s) Table
No
Check "FFH" ?
*
Check "FFH" on the 1st and 2nd page
Yes No
Last Block ?
Yes
End
Figure 1. Flow chart to create invalid block table.
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KM29W32000AT, KM29W32000AIT
NAND Flash Technical Notes (Continued)
Error in write or read operation
FLASH MEMORY
Over its life time, the additional invalid blocks may occur. Though the tight process control and intensive testing, Samsung minimizes the additional block failure rate, which is projected far below 0.1% up until 1million program/erase cycles. Refer to the qualification report for the actual data.The following possible failure modes should be considered to implement a highly reliable system. Failure Mode Erase Failure Write Detection and Countermeasure sequence Status Read after Erase --> Block Replacement Status Read after Program --> Block Replacement Program Failure Read back ( Verify after Program) --> Block Replacement or ECC Correction Read Single Bit Failure Verify ECC -> Block Replacement or ECC Correction
ECC
: Error Correcting Code --> Hamming Code etc. Example) 1bit correction & 2bit detection
Program Flow Chart
If ECC is used, this verification operation is not needed. Start Write 00H
Write 80H
Write Address
Write Address
Write Data
Wait for tR Time
Write 10H
Verify Data
No
*
Program Error
Write 70H
Yes Program Completed
SR. 6 = 1 ? or R/B = 1 ? Yes No SR. 0 = 0 ?
No
*
*
Program Error
: If program operation results in an error, map out the block including the page in error and copy the target data to another block.
Yes
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KM29W32000AT, KM29W32000AIT
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Start Write 60H Write Block Address Write D0H Write 70H
FLASH MEMORY
Read Flow Chart
Start Write 00H Write Address Read Data ECC Generation
SR. 6 = 1 ? or R/B = 1 ? Yes No SR. 0 = 0 ? Yes Erase Completed
No
Reclaim the Error
No
Verify ECC Yes
*
Erase Error
* *
Page Read Completed
Block Replacement : copy the corrected whole block data to another block (recommended for high reliability system)
*
: If erase operation results in an error, map out the failing block and replace it with another block.
Block Replacement
Buffer memory
error occurs
Block A
When the error happens in Block "A", try to write the data into another Block "B" by reloading from an external buffer. Then, prevent further system access to Block "A"(by creating a "invalid block" table or other appropriate scheme.)
Block B
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KM29W32000AT, KM29W32000AIT
Pointer Operation of KM29W32000A
FLASH MEMORY
The KM29W32000A has three read modes to set the destination of the pointer. The pointer is set to "A" area by the "00h" command, to "B" area by the "01" command, and to "C" area by the "50h" command. Table 1 shows the destination of the pointer, and figure 2 shows the block diagram of its operations.
"A" area (00h plane)
"B" area (01h plane) 256 Byte
"C" area (50h plane) 16 Byte
Table 1. Destination of the pointer
256 Byte
Command 00H 01H 50H
Pointer position 0 ~ 255 byte 256 ~ 511 byte 512 ~ 527 byte
Area 1st half array(A) 2nd half array(B) spare array(C)
"A"
"B"
"C" Internal Page Buffer
Pointer select commnad (00h, 01h, 50h)
Pointer
Figure 2. Block diagram of pointer Operation Example of Pointer Operation programming
(1) "A" area program
50h "C" area 00h "A" area 80h
Address / Data input 10h "A" area program Address / Data input 01h "A" area "B" area 80h 10h "B" area program Address / Data input 50h "A" area "C" area 80h 10h "C" area program 80h 80h 80h
Address / Data input 10h "A" area program Address / Data input 10h "A" area program Address / Data input 10h "C" area program
(2) "B" area program
00h
(3) "C" area program
00h
Table 2. Pointer Status after each operation
Operation Program/Erase Pointer status after operation With previous 00H, Device is set to 00H Plane With previous 01H, Device is set to 00H Plane* With previous 50H, Device is set to 50H Plane "00h" Plane("A" area) "00h" Plane("A" area)
Reset Power up
* 01H command is valid just one time when it is used as a pointer for program/erase.
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KM29W32000AT, KM29W32000AIT
System Interface Using CE don' -care. t
FLASH MEMORY
For a easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal 528byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and reading would provide significant savings in power consumption.
Figure 3. Program Operation with CE don' -care. t CLE
CE don'-care t
CE
WE ALE
I/O0~7
80H
Start Add.(3Cycle)
Data Input
Data Input
10H
(Min. 10ns)
tCS CE
(Max. 45ns)
tCH CE
tCEA
tREA tWP WE I/O0~7
Timing requirements : If CE is is exerted high during data-loading, tCS must be minimum 10ns and tWC must be increased accordingly.
RE
out
Timing requirements : If CE is is exerted high during sequential data-reading, the falling edge of CE to valid data(tCEA) must be kept greater than 45ns.
Figure 4. Read Operation with CE don' -care. t
CLE
CE don'-care t
CE
RE ALE R/B tR
WE
I/O0~7
00H
Start Add.(3Cycle)
Data Output(sequential)
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KM29W32000AT, KM29W32000AIT
* Command Latch Cycle
FLASH MEMORY
CLE tCLS tCS CE tCLH tCH
tWP WE
tALS ALE tDS I/O0~7
tALH
tDH
Command
* Address Latch Cycle
tCLS CLE
tCS CE
tWC
tWC
tWP WE tWH tALS ALE tDS I/O0~7 tDH
tWP tWH
tWP
tALH
tDS
tDH
tDS
tDH
A0~A7
A9~A16
A17~A21
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KM29W32000AT, KM29W32000AIT
* Input Data Latch Cycle
tCLH CLE
FLASH MEMORY
tCH CE
tALS ALE
tWC
tWP WE tDS I/O0~7 tWH tDH
tWP
tDH
tWP tDH
tDS
tDS
DIN 0
DIN 1
DIN 511
* Sequential Out Cycle after Read(CLE=L, WE=H, ALE=L)
CE
tRC tRP tREA tREH tREA tREA
tCHZ*
RE tRHZ tRHZ* I/O0~7 tRR R/B Dout Dout Dout
tRHZ*
NOTES : Transition is measured 200mV from steady state voltage with load. This parameter is sampled and not 100% tested.
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KM29W32000AT, KM29W32000AIT
* Status Read Cycle
tCLS CLE tCLS tCS CE tCH tWP WE tWHR RE tDS I/O0~7 70H tDH tIR tCSTO tCLH
FLASH MEMORY
tCHZ*
tRSTO
tRHZ* Status Output
READ1 OPERATION(READ ONE PAGE)
CLE tCEH CE tWC WE tWB tAR2 ALE tR RE tRR tRC tRHZ tCRY tCHZ
00h or 01h
I/O0~7
A0 ~ A7
A9 ~ A16
A17 ~ A21
Dout N
Dout N+1
Dout N+2
Dout N+3
Dout 527
Column Address
Page(Row) Address Busy
tRB
R/B
16
KM29W32000AT, KM29W32000AIT
READ1 OPERATION(INTERCEPTED BY CE)
FLASH MEMORY
CLE
CE
WE tWB tAR2 ALE tR RE tRR I/O0~7
00h or 01h A0 ~ A7 A9 ~ A16 A17 ~ A21 Dout N Dout N+1 Dout N+2 Dout N+3
tCHZ
tRC
Column Address
Page(Row) Address Busy
R/B
READ2 OPERATION(READ ONE PAGE)
CLE
CE
WE tWB
tR tAR2
ALE tRR RE
Dout 511+M+1
I/O0~7
50H
A0 ~ A7
A9 ~ A16
A17 ~ A21
Dout 511+M
512
Dout 527
R/B M Address
A0 ~ A3 :Valid Address A4 ~ A7 :Don't care
Selected Row
16 Start address M
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KM29W32000AT, KM29W32000AIT
SEQUENTIAL ROW READ OPERATION
FLASH MEMORY
CLE
CE
WE
ALE
RE
I/O0~7
00H
A0 ~ A7 A9 ~ A16 A17 ~ A21
Dout N
Dout N+1
Dout N+2
Dout 527
Dout 0
Dout 1
Dout 2

Dout 527
R/B
M
Busy
M+1
Busy
N
Output
Output
PAGE PROGRAM OPERATION
CLE
CE tWC WE tWB ALE tPROG tWC tWC
RE
I/O0~7
80H
A0 ~ A7 A9 ~ A16 A17 ~ A21 Page(Row) Address
Din N
Din N+1
Din 527
10H Program Command
70H Read Status Command
I/O0
Sequential Data Column Input Command Address
1 up to 528 Byte Data Sequential Input
18
R/B
I/O0=0 Successful Program I/O0=1 Error in Program
KM29W32000AT, KM29W32000AIT
BLOCK ERASE OPERATION(ERASE ONE BLOCK)
FLASH MEMORY
CLE
CE tWC WE tWB ALE tBERS tWC
RE
I/O0~7
60H
A9 ~ A16 A17 ~ A21 Block Address
DOH
70H
I/O0
R/B
Auto Block Erase Setup Command
Busy
Erase Command
Read Status Command
I/O0=0 Successful Erase I/O0=1 Error in Erase
SUSPEND & RESUME OPERATION DURING BLOCK ERASE
CLE
CE
WE tWB ALE
RE
Block Address
tRHW
D0H B0H D0H 70H I/O0
I/O0~7
60H A9 ~ A16 A17 ~ A21
tWB tSR
Busy
R/B
Auto Block Erase Setup Command
Suspend
Program/Read Function are Acceptable
Resume
I/O0=0 Successful Erase I/O0=1 Error in Erase
19
KM29W32000AT, KM29W32000AIT
MANUFACTURE & DEVICE ID READ OPERATION
FLASH MEMORY
CLE
CE
WE
ALE
RE tREAID I/O0~7
90H Read ID Command 00H ECH Maker Code E3H Device Code
20
KM29W32000AT, KM29W32000AIT
DEVICE OPERATION
PAGE READ
FLASH MEMORY
Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00H to the command register along with three address cycles. Once the command is latched, it does not need to be written for the following page read operation. Three types of operations are available : random read, serial page read and sequential read. The random read mode is enabled when the page address is changed. The 528 bytes of data within the selected page are transferred to the data registers in less than 10s(tR). The CPU can detect the completion of this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the registers, they may be read out in 50ns cycle time by sequentially pulsing RE with CE staying low. High to low transitions of the RE clock output the data starting from the selected column address up to the last column address(column 511 or 527 depending on state of SE pin). After the data of last column address is clocked out, the next page is automatically selected for sequential read. Waiting 10s again allows for reading of the selected page. The sequential read operation is terminated by bringing CE high. The way the Read1 and Read2 commands work is like a pointer set to either the main area or the spare area. The spare area of bytes 512 to 527 may be selectively accessed by writing the Read2 command with SE pin low. Addresses A0 to A3 set the starting address of the spare area while addresses A4 to A7 are ignored. Unless the operation is aborted, the page address is automatically incremented for sequential read as in Read1 operation and spare sixteen bytes of each page may be sequentially read. The Read1 command(00H/01H) is needed to move the pointer back to the main area. Figures 3 thru 6 show typical sequence and timings for each read operation.
Figure 3. Read1 Operation CLE CE WE ALE R/B RE I/O0~7
00H 01H Start Add.(3Cycle) A0 ~ A7 & A9 ~ A21 Data Output(Sequential)
tR
(00H Command)
1st half array 2nd half array
(01H Command)*
1st half array 2nd half array
Data Field
Spare Field
Data Field
Spare Field
* After data access on 2nd half array by 01H command, the start pointer is automatically moved to 1st half array (00H) at next cycle.
21
KM29W32000AT, KM29W32000AIT
Figure 4. Read2 Operation CLE CE WE ALE tR R/B RE I/O0~7
50H Start Add.(3Cycle) A0 ~ A3 & A9 ~ A21 (A4 ~ A7 : Don't Care)
1st half array 2nd half array
FLASH MEMORY
Data Output(Sequential) Spare Field
Data Field
Spare Field
Figure 5. Sequential Row Read1 Operation
tR R/B I/O0~7
tR
tR
00H 01H
Start Add.(3Cycle) A0 ~ A7 & A9 ~ A21
Data Output 1st
Data Output 2nd (528 Byte)
Data Output Nth (528 Byte) (SE=H, 00H Command)
(SE=L, 00H Command)
1st half array 2nd half array
(SE=L, 01H Command)
1st half array 2nd half array
1st half array
2nd half array
1st 2nd
1st 2nd
1st 2nd
Nth
Nth
Nth
Data Field
Spare Field
Data Field
Spare Field
Data Field
Spare Field
22
KM29W32000AT, KM29W32000AIT
Figure 6. Sequential Read2 Operation(SE=fixed low) tR R/B I/O0~7
FLASH MEMORY
tR
tR
50H
Start Add.(3Cycle) A0 ~ A3 & A9 ~ A21 (A4 ~ A7 : Don't Care)
1st half array
Data Output 1st
Data Output 2nd (16 Byte)
Data Output Nth (16 Byte)
2nd half array
1st 2nd
Nth
Data Field
Spare Field
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programming of a byte or consecutive bytes up to 528, in a single page program cycle. The number of consecutive partial page programming operation within the same page without an intervening erase operation must not exceed ten. The addressing may be done in any random order in a block. A page program cycle consists of a serial data loading period in which up to 528 bytes of data may be loaded into the page register, followed by a nonvolatile programming period where the loaded data is programmed into the appropriate cell. Serial data loading can be started from 2nd half array. About the pointer operation, please refer to the attached technical notes.The serial data loading period begins by inputting the Serial Data Input command(80H), followed by the three cycle address input and then serial data loading. The bytes other than those to be programmed do not need to be loaded. The Page Program confirm command(10H) initiates the programming process. Writing 10H alone without perviously entering the serial data will not initiate the programming process. The internal write controller automatically executes the algorithms and timings necessary for program and verify, thereby freeing the CPU for other tasks. Once the program process starts, the Read Status Register command may be entered, with RE and CE low, to read the status register. The CPU can detect the completion of a program cycle by monitoring the R/B output, or the Status bit(I/O6) of the Status Register. Only the Read Status command and Reset command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O0) may be checked(Figure 7). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status command mode until another valid command is written to the command register.
Figure 7. Program & Read Status Operation
R/B I/O0~7
tPROG
80H
Address & Data Input A0 ~ A7 & A9 ~ A21 528 Byte Data
10H
70H
I/O 0
Pass
Fail
23
KM29W32000AT, KM29W32000AIT
BLOCK ERASE
FLASH MEMORY
The Erase operation can erase on a block(8K Byte) basis. Block address loading is accomplished in two cycles initiated by an Erase Setup command(60H). Only address A13 to A21 is valid while A9 to A12 is ignored. The addresses of the block to be erased to FFH. The Erase Confirm command(D0H) following the block address loading initiates the internal erasing process. This two-step sequence of setup followed by execution ensures that memory contents are not accidentally erased due to external noise conditions. At the rising edge of WE after the erase confirm command input, the internal write controller handles erase, erase-verify and pulse repetition where required. If an erase operation error is detected, the internal verify is halted and erase operation is terminated. When the erase operation is completed, the Write Status Bit(I/O0) may be checked. Figure 8 details the sequence.
Figure 8. Block Erase Operation tBERS R/B I/O0~7
60H
Address Input(2Cycle) Block Add. : A9 ~ A21
D0H
70H
I/O 0
Pass
Fail
ERASE SUSPEND/ERASE RESUME
The Erase Suspend allows interruption during any erase operation in order to read or program data to or from another block of memory. Once an erase process begins, writing the Erase Suspend command (B0H) to the command register suspends the internal erase process, and the R/B signal return to "1". Erase Suspend Status bit will be also set to "1" when the Status Register is read. At this time, blocks other than the suspended block can be read or programmed. The Status Register and R/B operation will function as usual. After the Erase Resume command is written to it, the erase process is restarted from the beginning of the erasing period. The Erase Suspend Status bit and R/B will return to "0". Refer to Figure 9 for operation sequence.
Figure 9. Erase Suspend & Erase Resume Operation
R/B
I/O0~7
60H
D0H
B0H
D0H
Block Address input Erase Function Start Erase Function Suspend Erase Function Resume
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KM29W32000AT, KM29W32000AIT
READ STATUS
FLASH MEMORY
The device contains a Status Register which may be read to find out whether program or erase operation is complete, and whether the program or erase operation completed successfully. After writing 70H command to the command register, a read cycle outputs the contents of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE does not need to be toggled for updated status. Refer to table 2 for specific Status Register definitions. The command register remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read cycle, a read command(00H or 50H) should be given before sequential page read cycle.
Table2. Status Register Definition
SR I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 Erase Suspend Device Operation Write Protect Reserved for Future Use Status Program / Erase Definition "0" : Successful Program / Erase "1" : Error in Program / Erase "0" "0" "0" "0" "0" : Erase in Progress / Completed "1" : Suspended "0" : Busy "0" : Protected "1" : Ready "1" : Not Protected
READ ID
The device contains a product identification mode, initiated by writing 90H to the command register, followed by an address input of 00H. Two read cycles sequentially output the manufacture code(ECH), and the device code (E3H) respectively. The command register remains in Read ID mode until further commands are issued to it. Figure 9 shows the operation sequence.
Figure 9. Read ID Operation
CLE tCR CE WE tAR1 ALE RE I/O0~7 tREADID
90H 00 Address. 1 cycle ECH Maker code E3H Device code
25
KM29W32000AT, KM29W32000AIT
RESET
FLASH MEMORY
The device offers a reset feature, executed by writing FFH to the command register. When the device is in Busy state during random read, program or erase modes, the reset operation will abort these operation. The contents of memory cells being altered are no longer valid, as the data will be partially programmed or erased. Internal address registers are cleared to "0"s and data registers to "1"s. The command register is cleared to wait for the next command, and the Status Register is cleared to value C0H when WP is high. Refer to table 3 for device status after reset operation. If the device is already in reset state a new reset command will not be accepted to by the command register. The R/B pin transitions to low for tRST after the Reset command is written. Reset command is not necessary for normal operation. Refer to Figure 10 below.
Figure 10. RESET Operation tRST R/B I/O0~7
FFH
Table3. Device Status
After Power-up Operation Mode Read 1 After Reset Waiting for next command
DATA PROTECTION
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at VIL during power-up and power-down as shown in Figure 8. The two step command sequence for program/erase provides additional software protection.
Figure 8. AC Waveforms for Power Transition
~ 2.5V
~ 2.5V
VCC
WP
26
High
KM29W32000AT, KM29W32000AIT
READY/BUSY
FLASH MEMORY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command register or random read is begin after address loading. It returns to high when the internal controller has finished the operation. The pin is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. An appropriate pull-up resister is required for proper operation and the value may be calculated by following equation.
VCC VCC(Max.) - VOL(Max.) Rp = R/B open drain output where IL is the sum of the input currents of all devices tied to the R/B pin. IOL + IL = Note* 8mA + IL
GND Device
Note* KM29W32000 : 5.1V When Vcc=3.6~5.5V 3.2V When Vcc=2.7~3.6V
27
KM29W32000AT, KM29W32000AIT
PACKAGE DIMENSIONS
44(40) LEAD PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(II) 44(40) - TSOP2 - 400F
FLASH MEMORY
Unit :mm/Inch
0~8 0.25 0.010 TYP #44(40) #23(21) 0.45~0.75 0.018~0.030 11.760.20 0.4630.008 10.16 0.400 0.50 0.020 #1 #22(20)
+0.10
0.15 -0.05 0.006 -0.002
+0.004
18.410.10 0.7250.004
1.000.10 0.0390.004
1.20 Max. 0.047
18.81 Max. 0.741
0.10 MAX 0.004 0.05 Min. 0.002
(
0.805 ) 0.032
0.350.10 0.0140.004
0.80 0.0315
28

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